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Compare Revisions

• This comparison shows the changes necessary to convert path

  → /C-OSD/trunk/config.c @ 1770

  → /C-OSD/trunk/config.c @ 1771

  ↔ Reverse comparison

• Compare Path:	Rev

  With Path:	Rev

Ignore whitespace Rev 1770 → Rev 1771

/C-OSD/trunk/config.c
49,7 → 49,11
const char VM_PAL[] PROGMEM = "PAL ";
const char VM_NTSC[] PROGMEM = "NTSC";
const displaymode_t * mode;
#if FCONLY
const displaymode_t * mode = fcdisplaymodes;
#else
const displaymode_t * mode = ncdisplaymodes;
#endif
/**
* read data saved in eeprom, print out message if <verbose> is set
93,7 → 97,7
write_ascii_string_pgm(3, 2, PSTR("boot"));
draw_logo(11, 1);
write_ascii_string_pgm(2, 5, PSTR(BUILDDATE));
write_ascii_string_pgm(2, 5, PSTR(BUILDOSDBUILDDATE));
get_eeprom(1);
105,6 → 109,15
}
write_ascii_string_pgm(2, 7, PSTR("Setting :"));
write_ascii_string_pgm(2, 8, PSTR("Battery:")); // Guessing Number of Cells
write_ascii_string_pgm(13, 8, PSTR("Cells")); // Number of Cells
write_ascii_string_pgm(2, 9, PSTR("Warn:")); // Warn Voltage
write_ascii_string_pgm(14, 9, PSTR("Max:")); // Max Voltage
#if FCONLY
write_ascii_string_pgm(2, 4, PSTR("FC only Mode"));
#else
122,13 → 135,10
paramset_serial setting;
setting = *((paramset_serial*)pRxData);
write_ascii_string_pgm(2, 7, PSTR("Setting :"));
write_ndigit_number_u(10, 7, setting.SettingsIndex, 1, 1);
write_ascii_string_len(13, 7, setting.param.Name, 12);
uint8_t cells = 0;
write_ascii_string_pgm(2, 8, PSTR("Battery:")); // Guessing Number of Cells
if (CELL_NUM == -1) {
#define MAX_CELL_VOLTAGE 43 // max cell volatage for LiPO
152,10 → 162,7
max_voltage = cells * CELL_VOLT_MAX;
write_ndigit_number_u(11, 8, cells, 1, 0);
write_ascii_string_pgm(13, 8, PSTR("Cells")); // Number of Cells
write_ascii_string_pgm(2, 9, PSTR("Warn:")); // Warn Voltage
write_ndigit_number_s_10th(8, 9, min_voltage, 3, 0);
write_ascii_string_pgm(14, 9, PSTR("Max:")); // Max Voltage
write_ndigit_number_s_10th(20, 9, max_voltage, 3, 0);